Composite Materials Research Progress

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Padture, , Advanced structural ceramics in aerospace propulsion, Nature Materials Advances in coating technologies have also engendered significant advances and increased reliability and use of multilayered wear, thermal, and environmental protection systems. Layered material systems are replacing advanced monolithic materials in a growing number of applications where the unique properties and functionality of each layer provides dramatically increased performance and life. These chemically, mechanically, and physically diverse layers interact and evolve throughout the lifetime of the coating, and important phenomena affecting performance and durability occur in each layer and particularly at the interfaces between disparate materials.

The successful implementation of strain tolerance and low conductivity coatings have dramatically increased coating lifetimes. The use of layered materials extends across material class. The use of polymeric coatings for environmental protection has expanded in the past decade.


For example, the development of high-surface-tension polymeric films with highly controlled chemistry and nanoscale features has fueled the use of tunable superhydrophobic and ice-phobic coatings that now protect microelectronics, solar cells, wind turbines, and airplane wings.

Semiconductors are the workhorse materials for electronic and photonic device applications—making up integrated circuits, circuit boards, and light emitters, and incorporated into packaging materials, displays, and any number of controlling and monitoring devices. Like many of the materials discussed in other sections of this chapter, the discovery paths followed in electronic materials have, in many cases, been influenced or even been directed by the industrial environment in which these materials discoveries participate.

This section will begin by describing some of those impacts, and then discuss how materials research MR has responded to these far-reaching factors. The final subsections of Section 2.

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Integrated circuits have transformed information and computational technologies. This revolution was enabled by five decades of improvements in the performance of silicon field-effect transistors FETs and has been characterized by exponentially compounded progress in the miniaturization of electronic devices and circuits. However, the past 20 years have encountered limits that have affected efforts at further miniaturization. The s saw devices reach sizes where gate insulator thickness and operating voltage became less effective avenues for further device scaling.

In the early s, heat removal and power density considerations contributed to the plateauing of microprocessor clock frequencies.

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In the past decade, relevant feature sizes have reached the single digits of nanometers, where fundamental physics is imposing increasingly rigorous constraints. Continued efforts to miniaturize have provided incremental. Parallel with those efforts have been concerted attempts to find alternative approaches to satisfy the needs of traditional information and computational technology needs.

These efforts have been seeded by a number of efforts jointly funded and directed by the public and private sectors see Box 2. Last, another major push in electronic materials over the past 10 years, heavily entwined, at times, with the other efforts, has been to develop new materials that will be potentially useful for totally new computation and information capabilities and needs.

The importance of the interplay between device and MR exists in all of the examples discussed in this section. In some cases, MR is focused on material properties critical to the performance of an established device concept.

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In other cases, adventurous MR is inspiring new device concepts and making the impossible suddenly possible. In all cases, much more remains to be done.

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Over the past decade, materials and process innovation made significant contributions to efforts to further miniaturize silicon-based field-effect devices. Selected materials research highlights include the following:. The 3D FinFET improved transistor performance by forming a conducting channel on all three sides of the vertical fin structure, improving power when compared to a traditional planar transistor at the same nominal dimension. Miniaturization performance gains over the past 10 years have also come through scaling driven by optical and extreme ultraviolet EUV lithography.

Early in the past decade, traditional gains were provided by advances in optical. For example, the industry moved from nm dry to nm immersion lithography by introducing water as an immersion fluid between the final lens element of the exposure tool and the photoresist. In most cases, these problems were addressed by developing materials for use as a spin-on topcoat to physically separate the photoresist and immersion media.

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  • The cost and complexity of this approach quickly exploded mask design and count, feature variation, etc. These included strategies such as self-aligned double patterning or other variants based on CVD 20 or ALD, providing tight layer-to-layer alignment, and simplifying integrated fabrication flows.

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    ALD also allowed for the integration of new high-k dielectrics and metal gates. ALD is atomic layer deposition, a subset of CVD that used alternatively pulsed gas sources to progress growth layer by layer. MBE is molecular beam epitaxy, which takes place in high vacuum with no carrier gas. With a wavelength of As all matter absorbs radiation at this wavelength, EUVL exposures occur in a vacuum chamber using reflective rather than transmissive optics.

    Photoresist outgassing during EUVL exposure serves as an additional performance constraint that the patterning film must consider, as resist by-products will damage the costly lens elements. Second, unlike UV-based photoresists designed in an energy space well understood by chemists, EUV photons create a complex cascade of photoelectrons and secondary electrons that transact the exposed material in poorly understood ways. As such, stochastic EUVL simulations have been important for understanding the process margin and design rules for features patterned via this high-energy technique.

    All of these EUVL advances have benefited and will continue to benefit tremendously from the synchrotron research and light sources discussed in Chapter 4. For example, a Lawrence Berkeley National Laboratory EUV patterning tool was used to characterize and study more than 12, material systems, an EUV photomask microscope was used to prove the existence of defects visible to only EUV light, and an EUV scatterometer was instrumental in the development of sub-nm wavefronts needed for further development of novel photomask architectures and materials. Ongoing research continues to provide possibilities for profound advances in the capability of information technologies, beyond continued miniaturization.

    One of many such examples is the negative capacitance field-effect transistor NCFET , sometimes also called the ferroelectric field-effect transistor. It showed a new way to break the existing constraints on power and performance, but building the proposed device with known ferroelectric materials at the nm-scale dimensions required for cost-competitive digital circuits appeared impractical. It is still too soon to predict when the NCFET will be commercialized and how important it will become for information technology, but a recent demonstration of a superior power-performance trade-off relative to closely comparable conventional FET circuits is very encouraging.

    Other compelling low-voltage, low-power device concepts are less developed.

    None of these will advance without further advances in materials. The past decades have seen a rapid maturation of emerging memory technologies based on novel materials and new cell architectures. These include spin-, phase change-, resistive- or memristors , and ferroelectric-based memories—all now commercially available.


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    In particular, they can all be fabricated at relatively low process temperatures, enabling integration of memory devices directly above blocks of logic. This fine-grained integration of memory and logic is seen as a key to the implementation of energy-efficient logic-in-memory and memory-in-logic architectures.

    At the same time, each of these devices offers advantages and disadvantages compared to the others. Each will advance only with advances in the properties of its requisite materials. The opportunity for STT-MRAM in the embedded memory market as an alternative or replacement to NOR flash is significant, as it is projected to be a good solution for harsh environments, such as the growing automotive market. Krivokapic, U. Rana, R.

    Galatage, A. Razavieh, A.

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    • Aziz, J. Liu, J. Shi, H. Kim, R. Sporer, C. Serrao, and A. Theis and P. Theis and H. Sophisticated nanophotonic communication networks based on passive waveguides and electro-optic phase and amplitude modulators have been demonstrated in recent years and are approaching large-scale commercialization. Frontier research in nanophotonics is focused on demonstration and development of tiny nonlinear optical devices based on the large nonlinear optical coefficients obtainable with 2D materials integrated in nm-scale optical resonators.

      Such devices may allow computational functions to be distributed in optical networks for smart routing and management of data flow. The past decade has seen a number of efforts to expand two-dimensional circuitry into three dimensions.